Valley-mode switching schemes for switching power converters

ABSTRACT

An improved valley-mode switching (VMS) scheme and circuitry for implementing the improved VMS switching scheme in a switch-mode power converter are disclosed. For a given switching cycle, a desired switch turn-on time is determined based on a pulse width modulation, pulse frequency modulation, or other suitable power converter control scheme. Also, one or more times corresponding to local minimums (valleys) are predicted for the voltage across a power switch of the switching power converter. The power switch is turned on at a valley immediately subsequent or otherwise subsequent to the desired switch time determined according to the power converter control scheme. Thus, the improved VMS scheme enables low-voltage switch operation to reduce switching loss and EMI noise without restricting the control scheme of the power converter.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority under 35 U.S.C. §119(e) from co-pending U.S. Provisional Patent Application No. 61/141,600, entitled “Valley-Mode Switching Schemes for Switching Power Converters,” filed on Dec. 30, 2008, which is incorporated by reference herein in its entirety.

BACKGROUND

1. Field of the Invention

The present invention relates to improved valley-mode switching schemes for switch-mode power converters.

2. Description of the Related Art

Each time a switch, such as a transistor, is turned on or off, energy is dissipated in proportion to the current and voltage being switched. The power losses associated with switch operation, referred to as switching losses, represent a significant source of power dissipation and therefore a significant source of inefficiency within conventional switch-mode power converters. In addition to increasing switching loss, large rates of change for voltages and/or currents (i.e., dv/dt and/or di/dt) at the time of switch transition increase stress upon the switch and the amount of electromagnetic interference (EMI) produced by the switch. Some switching schemes have been developed that take advantage of resonance within switch-mode power converters to turn on switches at times when the voltages applied to the switches are at a local minimum referred to as a valley. Such switching schemes are therefore typically referred to as valley-mode switching schemes (VMS schemes).

However, conventional VMS schemes are inadequate for several reasons. The resonant characteristics of a switch-mode power converter fluctuate in time based on operating conditions. For example, fluctuations in an input line voltage or in an output current drawn from the switch-mode power converter by an external load can affect the resonant behavior of the switch-mode power converter and therefore affect timing for valleys. Because conventional VMS schemes typically turn on the switch of the switch-mode power converter at the first valley in a switching cycle, such fluctuations in resonance therefore precipitate changes in switching frequency. These changes in switching frequency result in increased EMI emissions and make conventional VMS schemes compatible only with control schemes that utilize a variable switching frequency such as pulse frequency modulation (PFM) control schemes. For example, power converters employing conventional VMS schemes typically exhibit switching frequencies as low as 40 kHz and as high as 130 kHz mainly for the sole purpose of achieving VMS turn on. Furthermore, conventional VMS schemes require significant fundamental modification to feedback control schemes used by the switch-mode power converters to regulate signals such as output voltage and output current. Conventional VMS schemes also do not account for losses associated with turning off the power switch. Moreover, the high switching frequencies typically required by conventional VMS schemes (e.g., 130 kHz) make them unsuitable for switch-mode power converters that utilize one or more slow power switches such as bipolar junction transistors (BJTs).

SUMMARY

Embodiments of an improved valley-mode switching (VMS) scheme and circuitry for implementing the improved VMS switching scheme in a switch-mode power converter are disclosed. For a given switching cycle of a switch-mode power converter, a desired switch turn-on time is determined based on pulse width modulation, pulse frequency modulation, or other suitable converter control schemes. Also, one or more times corresponding to local minimums (valleys) are predicted for the voltage across the power switch. The power switch is turned on at a valley immediately subsequent or otherwise subsequent to the desired switch time determined according to the converter control scheme.

In one embodiment, a switching power converter comprises a transformer including a primary winding coupled to an input voltage and a secondary winding coupled to an output of the switching power converter, a switch coupled to the primary winding of the transformer, current through the primary winding being generated while the switch is turned on and not being generated while the switch is turned off, and a controller configured to generate a control signal to turn on or turn off the switch, the switch being turned on responsive to the control signal being in a first state and the switch being turned off responsive to the control signal being in a second state. The controller is further configured to determine a desired turn-on time of the switch in each switching cycle according to a control mode employed by the switching power converter, and generates in each switching cycle the control signal in the first state to turn on the switch at an actual turn-on time corresponding to one of a plurality of local minimums of a voltage across the switch subsequent to the desired turn-on time determined according to the control mode. In some embodiments, said one of the local minimums of the voltage across the switch may be the first local minimum voltage occurring immediately subsequent to the desired turn-on time determined according to the control mode. In some embodiments, the switch is a bipolar junction transistor and the voltage across the switch corresponds to the voltage between a collector and an emitter of the bipolar junction transistor. In other embodiments, the switch is a power metal oxide semiconductor field-effect transistor (MOSFET) and the voltage across the switch corresponds to the voltage between a drain and a source of the MOSFET. In still other embodiments the switch can be any other device capable of opening or closing a circuit in a controlled manner.

Thus, the improved VMS scheme according to embodiments herein enables low-voltage switch operation without restricting the control scheme of the switch-mode power converter. Furthermore, the improved VMS scheme prevents resonant characteristics of the switch-mode power converter from dictating switching frequencies utilized by the power converter, and supports BJT-based power switching in the switch-mode power converter.

The features and advantages described in the specification are not all inclusive and, in particular, many additional features and advantages will be apparent to one of ordinary skill in the art in view of the drawings and specification. Moreover, it should be noted that the language used in the specification has been principally selected for readability and instructional purposes, and may not have been selected to delineate or circumscribe the inventive subject matter.

BRIEF DESCRIPTION OF DRAWINGS

The teachings of the embodiments of the present invention can be readily understood by considering the following detailed description in conjunction with the accompanying drawings.

Figure (FIG. 1 illustrates an AC to DC flyback switching power supply, according to one embodiment of the present invention.

FIG. 2A illustrates the pin-outs of the controller IC of the AC to DC flyback switching power supply, according to one embodiment of the present invention.

FIG. 2B illustrates the internal circuitry of the controller IC of the AC to DC flyback switching power supply in more detail, according to one embodiment of the present invention.

FIG. 3 illustrates operational waveforms for the flyback switching power supply of FIG. 1.

FIG. 4 illustrates a circuit for detecting and predicting the timing of valleys for a switch voltage, according to one embodiment of the present invention.

DETAILED DESCRIPTION OF EMBODIMENTS

The Figures (FIG.) and the following description relate to preferred embodiments of the present invention by way of illustration only. It should be noted that from the following discussion, alternative embodiments of the structures and methods disclosed herein will be readily recognized as viable alternatives that may be employed without departing from the principles of the present invention.

Reference will now be made in detail to several embodiments of the present invention(s), examples of which are illustrated in the accompanying figures. It is noted that wherever practicable similar or like reference numbers may be used in the figures and may indicate similar or like functionality. The figures depict embodiments of the present invention for purposes of illustration only. One skilled in the art will readily recognize from the following description that alternative embodiments of the structures and methods illustrated herein may be employed without departing from the principles of the invention described herein.

According to various embodiments of the present invention, an improved valley-mode switching (VMS) scheme is provided that, among other advantages, decreases switching loss, decreases switching stress, reduces switching-produced EMI for a switch-mode power supply, and enables the use of conventional feedback control techniques in the switch-mode power converter. For a given switching cycle of the switching power converter, a desired switch turn-on time is determined based on pulse width modulation, pulse frequency modulation, or other suitable converter control schemes. Also, one or more times corresponding to local minimums (valleys) are predicted for the voltage across the power switch. The power switch is turned on at a valley immediately subsequent or otherwise subsequent to the desired switch time determined according to the power converter control scheme.

The improved VMS scheme described herein also enables a switching power converter to utilize one or more slow-switching devices (e.g., BJTs) for power switching. BJTs are desirable as switches because of their low cost relative to field effect transistors (FETs such as MOSFETs), particularly for high voltage and/or power ratings. BJTs also typically have less rate of change of voltage or current during switching, allowing for easier EMI (Electro-Magnetic Interference) design. Also, BJTs generally have slow turn off, and thus do not require snubber circuits for low-power designs, reducing component count and BOM (Bill of Material) cost in the switching power supply as well as eliminating power loss associated with snubber circuits. In addition, a BJT switch can be a discrete component external to the controller IC 102, providing a broad choice of components with a possibility to achieve lower overall BOM cost in the switching power converter. A valley detection circuit is also described that enables implementation of the improved VMS scheme.

Figure (FIG. 1 illustrates an exemplary power converter 100 in accordance with one embodiment of the present invention. As illustrated, the power converter 100 is an AC to DC flyback switch-mode power supply, but other topologies of switch-mode power converters can be designed in accordance with the improved VMS scheme and other teachings described herein. The power converter 100 includes three principal sections, i.e., a front end 104, a power stage, and a secondary stage.

The front end 104 is directly connected to an AC voltage source (not shown) at nodes L, N, and includes a bridge rectifier comprised of inductor L1, resistors R1, F1, diodes D1, D2, D3, D4, and capacitor C2. The output of the front end section 104 at node 105 is a rectified but unregulated DC input voltage. The rectified input line voltage at node 105 is input to the supply voltage pin Vcc (pin 1) of switch controller 102 via resistors R10 and R11 for use as the supply voltage during initial start-up of controller 102. The line voltage at node 105 is also applied to the primary winding 106 of power transformer T1-A. Bypass capacitor C5 removes high frequency noise from the rectified line voltage at node 105.

The power stage comprises power transformer T1-A, a switch 112, and a controller 102. Power transformer T1-A includes a primary winding 106, a secondary winding 107, and an auxiliary winding 108. Controller 102 maintains output regulation via control of the ON and OFF states of switch 112 via a control signal 110 output from the OUTPUT pin (pin 5) of controller 102. In one embodiment, controller 102 is an application-specific integrated circuit (ASIC) and generates the control signal 110 in accordance with the improved VMS scheme and techniques described herein.

Control signal 110 drives the control terminal of switch 112. In the embodiment illustrated by FIG. 1, switch 112 is a bipolar junction transistor (BJT), so the control terminal is the base (B) terminal of switch 112. Meanwhile, the collector (C) of switch 112 is connected in series with the primary winding 106, while the emitter (E) of switch 112 is connected to the ISENSE pin (pin 4) of controller 102 and to ground via resistor R12. In other embodiments, switch 112 can be another type of transistor such as a MOSFET or any other device capable of opening or closing a circuit in a controlled manner. The ISENSE pin (pin 4) senses the current through the primary winding 106 and switch 112 in the form of a voltage across sense resistor R12. The GND pin (pin 2) of controller 102 is connected to ground. Controller 102 can employ any one of a number of well known modulation techniques, such as pulse-width-modulation (PWM) or pulse-frequency-modulation (PFM), and/or their combinations, to control the ON and OFF states and duty cycles of BJT power switch 110, as well as the amplitude of the base current of BJT switch 112.

The secondary stage of the converter 100 includes the secondary winding 107 and diode D6, capacitor C10, and resistor R14. Diode D6 functions as an output rectifier and capacitor C10 functions as an output filter. The resulting regulated output voltage Vo at node 109 is delivered to the load (not shown). Resistor R14 is the so-called pre-load which is typically used for stabilizing the output at no load conditions. Also, ESD discharge gap (ESDI) is coupled between the primary winding 106 and output node 109.

As shown by FIG. 1, the output voltage Vo across the secondary winding 107 is reflected by the voltage 120 across auxiliary winding 108, which is input to the VSENSE pin (pin 3) of controller IC 102 via a resistive voltage divider comprised of resistors R3 and R4. In one embodiment, the voltage 114 at the VSENSE pin (pin 3) provides feedback to the controller 102 for use in controlling the operation of switch 112 and the output voltage 109 for regulation of output voltage (Vo) or output current (lout). Also, although controller 102 is powered up by the line voltage 105 at start-up, after start-up and in normal operation, controller 102 is powered up by the voltage across auxiliary winding 108 and the line voltage 105 is not used for regulation of output voltage (Vo) and input voltage (Vin) in normal operation. Diode D5 and resistor R2 form a rectifier for rectifying the voltage 120 across auxiliary winding 108 for use as the supply voltage input to the VCC pin (pin 1) of controller 102 during normal operation of the switching power converter 100. Capacitor C9 is used to hold power from the line voltage at node 105 at start-up or from the voltage across auxiliary winding 108 during start-up and between switching cycles of the switching power converter 100.

FIG. 2A illustrates the pin-outs of the controller IC 102 according to one embodiment of the present invention. Controller 102 is a 5-pin IC. Pin 1 (Vcc) is a power input pin for receiving the supply voltage, pin 2 (GND) is a ground pin, pin 3 (V_(SENSE)) is an analog input pin configured to receive the voltage 120 across the auxiliary winding 108 of the flyback switching power supply for primary-side regulation of the output voltage 109, pin 4 (I_(SENSE)) is an analog input pin configured to sense the primary-side current of the flyback switching power supply in the form of an analog voltage, for cycle-by-cycle peak current control and limit. Pin 5 (OUTPUT) is an output pin outputting base drive signal 110 for controlling the on-times and off-times of the BJT power switch 112 as well as the amplitude of the base current of BJT power switch 112.

FIG. 2B illustrates the internal circuitry of the controller 102, according to one embodiment of the present invention. Controller 102 includes several main circuit blocks, including a V_(SENSE) signal conditioning block 202, an I_(SENSE) signal conditioning block 206, and a digital logic control block 204. Controller 102 receives analog signals such as V_(SENSE) 114 at pin 3 and the I_(SENSE) voltage 116 at pin 4, but adaptively processes these parameters using digital circuitry and digital state machines to generate the appropriate control signal 110 at pin 5 (Output) for regulation of the output voltage (Vo) and output current (lout) under the adopted operation mode of the switching power converter 100.

V_(SENSE) signal conditioning block 202 receives V_(SENSE) 114 as an analog voltage signal and generates one or more voltage feedback signals 218 that reflect the output voltage (Vo) at node 109. The V_(SENSE) signal conditioning block 202 includes a valley detection module 212 that detects resonant characteristics of V_(SENSE) 114 and outputs related valley feedback signals, as will be explained in more detail below with reference to FIG. 4. Included in the voltage feedback signals 218 are the valley feedback signals output to the valley prediction module 214.

I_(SENSE) signal conditioning block 206 receives the I_(SENSE) voltage 116 as an analog voltage signal and generates one or more current feedback signals 220 that reflect the primary side current flowing through switch 112. Sensing the V_(SENSE) 114 voltage allows for precise output voltage regulation, and sensing the I_(SENSE) voltage 116 allows for precise cycle-by-cycle peak current control and limiting in both constant voltage and constant current modes as well as precise constant current (output current lout) control that is insensitive to the magnetizing inductance Lm of the transformer T1-A.

Digital logic control block 204 processes the voltage feedback signals 218 and the current feedback signals 220 and implements an improved VMS scheme to generate the control signal 110 that governs the operation and on/off states of the switch 112 for regulation of output voltage (Vo) and output current (Iout). Digital logic control block 204 includes a valley prediction module 214 that predicts the location of local valleys for V_(SENSE) 114 based on resonance information included in the voltage feedback signals, as detailed below with reference to FIGS. 3 and 4. Also, digital logic control block 204 includes a digital state machine (not shown) for implementing one or more control schemes for regulating the operation of the power converter 100 based on the voltage feedback signals 218 and the current feedback signals 220. Digital logic control block 204 can implement any number of control schemes suitable for switch-mode power converters 100, such as pulse-width-modulation (PWM) or pulse-frequency-modulation (PFM), and/or their combinations.

Under an example PWM control scheme, digital logic control block 204 turns on the switch 112 with a constant switching frequency, and therefore a constant switching period, but varies the duty cycle of the switch by adjusting how long the switch 112 remains ON during each switching period. Duty cycle refers to the fraction (often expressed as a percentage) of the switching period during which the switch 112 is ON. For example, a PWM switching scheme may have a switching frequency of 100 kHz and therefore a switching period of 10 μs. Hence, for a duty cycle of 30%, switch 112 would be ON for 3 μs and OFF for 7 μs of each switching period. Under PWM control, digital logic control block 204 regulates the output voltage (Vo) at node 109 based on feedback signals such as the voltages received by either the V_(SENSE) pin (pin 3) or I_(SENSE) pin (pin 4) by adjusting the duty cycle of control signal 110, but maintains a constant switching frequency for control signal 110.

Under an example PFM control scheme, digital logic control block 204 turns on the switch 112 with pulses of a set duration, but controls the duty cycle of control signal 110 by issuing the pulses with a variable switching frequency, and therefore a variable switching period. For example, a PFM switching scheme may turn on the switch 112 for 5 μs of each switching period, but vary the switching frequency between 40 kHz and 130 kHz. A switching frequency of 40 kHz would correspond to a switching period of 25 μs and therefore a duty cycle of 20%, whereas a switching frequency of 130 kHz would correspond to a switching period of 7.7 μs and therefore a duty cycle of approximately 65%. Hence, under PFM control, digital logic control block 204 regulates the output voltage (Vo) at node 109 based on feedback signals such as the voltages received by either the V_(SENSE) pin (pin 3) or I_(SENSE) pin (pin 4) by adjusting the frequency and period of control signal 110, but the switch 112 is ON for the same duration during each switching period.

The example PWM and PFM control schemes described above are presented for illustrative purposes. The improved VMS scheme and associated techniques described herein can benefit a switch-mode power converter 100 that uses any control scheme, regardless of whether PWM or PFM or some other control scheme is used. For example, the improved VMS scheme enables the power converter 100 to take advantage of resonance within the power converter 100 to operate switch 112 when the voltage across switch 112 is at a minimum.

FIG. 3 includes operational waveforms that illustrate an improved VMS scheme for a switch-mode power converter in accordance with one embodiment of the present invention. As described above, V_(SENSE) 114 represents the voltage on the V_(SENSE) pin (pin 3) of switch controller 102. V_(CE) 304 represents the voltage across switch 112. Hence, in the embodiment illustrated by FIG. 1 wherein the switch 112 is a BJT, V_(CE) 304 is the voltage between the collector and the emitter of BJT switch 112. In other embodiments (not shown), switch 112 can be a power MOSFET, in which case V_(CE) 304 would correspond to the voltage between the source of the MOSFET and the drain of the MOSFET. As can be seen from the schematic of FIG. 1, V_(SENSE) 114 is substantially proportional to the voltage 120 across the auxiliary winding of the transformer. V_(SENSE) 114 and V_(CE) 304 exhibit nearly identical timing characteristics. As described above, control signal 110 represents the voltage on the OUTPUT pin (pin 5) of switch controller 102. The switch 112 is ON (closed) when control signal 110 is HIGH and the switch 112 is OFF (open) when control signal 110 is LOW. V_(VMS) 308, valley indicator pulses 310, and desired switch pulses 312 are timing signals internal to controller 102 whose generation and significance are detailed below in reference to FIG. 3.

At time t_(ON) 320A, controller 102 generates control signal 110 to be HIGH, turning on (closing) switch 112. Switch 112 remains closed until time t_(OFF) 322A, when control signal 110 becomes LOW pursuant to the operation of controller 102. As explained above, the particular timings of t_(ON) 320A and t_(OFF) 322A are determined by the particular control scheme (PWM or PFM) employed in switching power converter 100. While switch 112 is closed from time t_(ON) 320A to time t_(OFF) 322A, referred to herein as the ON-time (or ON-period) T_(ON) 331, the rectified DC input voltage V_(IN) 105 is applied to the primary winding 106 and the current through the primary winding 106 increases. During the ON-time T_(ON) 331, the voltage across the auxiliary winding 108 is characterized by the mathematical expression

${V_{X} = {{- \frac{N_{X}}{N_{1}}}V_{IN}}},$

wherein N_(X) is the number of turns for the auxiliary winding 108, N₁ is the number of turns for the primary winding 106, V_(IN) is the rectified DC input voltage at node 105, and V_(X) is the voltage at node 120 across the auxiliary winding 108. Although the voltage 120 across the auxiliary winding 108 is negative during T_(ON) 331, V_(SENSE) 114 does not significantly decrease below zero because of the clamping diode 430 included in controller 102. As shown in FIG. 4, the anode of the clamping diode 430 is connected to GND while the cathode of the clamping diode 430 is connected to the V_(SENSE) pin (pin 3). Hence, V_(SENSE) does not drop below zero during T_(ON) 331 by more than the forward voltage drop of the clamping diode 430. V_(CE) 304 is also close to zero throughout T_(ON) 331.

However, referring back to FIG. 3, at time t_(OFF) 322A, control signal 110 goes LOW, causing switch 112 to open and suddenly interrupting the current through the primary winding 106. The current through the primary winding 106 stays at zero until the end of the OFF period of switch 112, i.e., until the switch 112 is turned on again at time t_(ON) 320B as will be explained in more detail below. As shown by FIG. 3, this sudden change in current results in high-frequency parasitic ringing for both V_(SENSE) 114 and V_(CE) 304 immediately following time t_(OFF) 322A. The high-frequency parasitic ringing results from resonance between the transformer leakage inductance and the parasitic capacitance seen from the collector and emitter of BJT switch 112 in parallel with the equivalent parallel parasitic capacitance of the primary winding 106, and typically dies out quickly. After the high-frequency parasitic ringing dies out, V_(SENSE) 114 and V_(CE) 304 remain almost flat until the transformer resets, shown in FIG. 3 as time t_(RESET) 324A.

The duration between t_(OFF) 322A and t_(RESET) 324A is referred to herein as the transformer reset period (T_(RST)) 333. During the transformer reset period T_(RST) 333, diode D6 conducts and the voltage across the secondary winding 107 approximately equals the output voltage 109 (V_(O)) (the forward voltage drop across diode D6 can be considered negligible for the purpose of illustrative clarity). Accordingly, the voltage across the primary winding 106 (V₁) can be expressed in terms of the output voltage 109 (V_(O)) as

$V_{1} = {\frac{N_{1}}{N_{2}}V_{O}}$

and the voltage across the auxiliary winding 108 (V_(X)) can be expressed as

$V_{X} = {{+ \frac{N_{X}}{N_{2}}}V_{O}}$

wherein N₁, N₂, and N_(X) are the number of turns for the primary winding 106, secondary winding 107, and auxiliary winding 108, respectively. During the transformer reset time T_(RST) 333, V_(SENSE) 114 follows the voltage across the auxiliary winding 108 according to the scaling factor set by the voltage divider comprised of resistors R3 and R4. Meanwhile, V_(CE) 304 is given by the expression

${V_{CE} = {{\frac{N_{1}}{N_{2}}V_{O}} + V_{IN}}},$

wherein V_(IN) is again the rectified DC input voltage at node 105.

The transformer reset time T_(RST) 333 is dictated by the volt-second-balance requirement for resetting the transformer core and can vary between switching cycles based on fluctuations in load and other quantities within the power converter 100. At t_(RESET) 324A (the end of the transformer reset time T_(RST) 333), diode D6 stops conducting, causing the transformer magnetizing inductance and therefore V_(SENSE) 114 and V_(CE) 304 to resonate, a phenomenon referred to herein as transformer ringing. The resonant frequency (f_(RES)) and resonant period (T_(RES)) 327 of ringing for V_(SENSE) 114 and V_(CE) 304 due to transformer ringing is determined by the parasitic capacitance seen from the collector and the emitter of BJT switch 112 in parallel with the equivalent parallel parasitic capacitance of the primary winding 106. Due to various damping and loss factors within the power converter 100, V_(SENSE) 114 and V_(CE) 304 are decaying sinusoidal signals with resonant period T_(RES) 327.

As shown by FIG. 3, the ringing-induced voltage oscillations cause V_(SENSE) 114 and V_(CE) 304 to periodically approach or reach local minimum voltages and local maximum voltages. When the OFF time for switch 112 is long relative to the resonant period T_(RES) 327, eventually the transformer ringing decays completely and V_(CE) 304 settles at V_(IN) 105. Times at which V_(CE) 304 reaches a local minimum as a result of transformer ringing are referred to herein as valleys 328A, 328B . . . 328D. For example, FIG. 3 illustrates a first valley 328A, a second valley 328B, a third valley 328C, and a fourth valley 328D. Although four valleys are shown in FIG. 3, there can be more or less than four valleys before the switch is turned ON again at t_(ON) 320B.

As described previously, conventional VMS schemes would turn on switch 112 (i.e., set control signal 110 HIGH) at the first valley 328A, which is prior to the desired switching timing 312. Thus, using the durations shown in FIG. 3, conventional VMS schemes would result in a switching period of approximately (T_(ON)+T_(RST)+T_(RES)/2). Therefore, as described previously, fluctuations in the transformer reset time T_(RST) 333 as well as the ON-time T_(ON) 331 would precipitate changes in the switching frequency of the power converter 100, and force the power converter to operate only in a variable switching-frequency control mode, such as a PFM mode.

In contrast, the improved VMS scheme implemented by controller 102 according the embodiment of the present invention does not necessarily turn on switch 112 (i.e., set control signal 110 HIGH) at the first valley 328A. Rather, controller 102 can turn on the switch 112 at any time after the end of the transformer reset period (t_(RESET) 324A). This turn-on time (shown in FIG. 3 as t_(ON) 320B) is determined according to the control scheme employed by power converter 100 (e.g., a PWM, PFM or other suitable control scheme).

Specifically, digital logic control block 204 determines a desired switch time t_(DESIRED) 330 in accordance with PWM, PFM, or other control schemes suitable for switch-mode power converters 100. Digital logic control block 204 determines the desired switch time 330 independently of the resonant characteristics of power converter 100. Hence, resonant characteristics of the power converter 100 such as the transformer reset period T_(RST) 333 or the resonant period T_(RES) 327 do not constrain the control scheme implemented by digital logic control block 204 or influence determination of the desired switch time 330.

Digital logic control block 204 issues a desired switch pulse 312 at the determined desired switch time t_(DESIRED) 330. In one embodiment, controller 112 then sets control signal 110 HIGH at the valley 328D that is immediately subsequent to the desired switch pulse 312, as shown by FIG. 3. In other embodiments, controller 112 may set control signal 110 HIGH at any valley that occurs after the desired switch pulse. Hence, one embodiment of the improved VMS scheme according to the embodiments herein advantageously turns on switch 112 while V_(CE) 304 is at a local minimum (i.e., a valley 328A, 328B . . . 328D) without restricting the control scheme or switching frequency utilized by controller 102. In other words, controller 102 determines the appropriate desired switch time 330 based on the employed control scheme independent of the resonant characteristics of the power converter 100, and then causes switch 112 to be turned on at the valley 328D immediately following the desired switch time 330.

The improved VMS scheme therefore reduces the negative impacts of fluctuations in power converter 100 resonance characteristics by employing valley mode switching without interrupting the employed switch control scheme (PWM, PFM, etc.) while still enjoying the benefits of reducing switching loss by switching the switch 112 on at a valley, i.e., when the voltage across the switch 112 is at a local minimum. Accordingly, one benefit of the improved VMS scheme is the enabling of low-voltage resonance-based switching in conjunction with a PWM control scheme. Another benefit of the improved VMS scheme is compatibility with switching periods longer than those dictated by transformer reset periods T_(RST) 333, thereby enabling switch 112 to be a slow-switching device such as a BJT.

As shown by FIG. 3, there is a timing delay between the desired switch pulse 312 generated by the digital logic control block 204 at timing t_(DESIRED) 330 and the turn on timing t_(ON) 320B of switch 112 (i.e., control signal 110 going HIGH) at valley 328D. However, the timing delay does not adversely affect operation of the power converter 100. Resonant periods T_(RES) 327 are typically brief relative to the switching period of the switching power converter, so the delay between the desired switch pulse 312 and t_(ON) 320B is usually not significant. Furthermore, the small impact of the timing delay is reflected in the output voltage 109 and other converter 100 parameters, and therefore the PWM, PFM, or other feedback-based control schemes implemented by controller 102 naturally compensates for the timing delay when determining the on-times and off-times for the subsequent switching period. Additionally, the slight fluctuations in timing delay from one switching cycle to the next switching cycle introduce an intrinsic dithering to the switching frequency over time, beneficially reducing switch-produced EMI.

FIG. 4 depicts a valley detection circuit 212 in accordance with one embodiment of the present invention. As explained above, the valley detection circuit 212 may be present in controller 102, specifically in the V_(SENSE) signal conditioning circuit 202. The valley detection circuit 212 detects features of signals within the power converter 100 such as V_(SENSE) 114 and V_(CE) 304. A detected feature can comprise, for example, the timing of a rising edge or falling edge of such signals, or such signals crossing a particular voltage threshold. The features detected by valley detection circuit 212 are processed by valley prediction module 214 in digital logic control block 204 to predict the locations of valleys 328A, 328B . . . 328D, enabling the improved VMS scheme according to the embodiments described herein. The valley detection circuit 212 includes a VMS comparator 410, a knee comparator 420, and the previously described clamping diode 430.

VMS comparator 410 receives V_(SENSE) 114 at its positive input and compares it to a VMS reference voltage 405 received at the negative input of VMS comparator 410. VMS comparator 410 outputs the V_(VMS) signal 308. Hence, as illustrated by the waveforms of FIG. 3, the V_(VMS) signal 308 is HIGH whenever V_(SENSE) 114 is above VMS reference 405 and is LOW whenever V_(SENSE) 114 is below VMS reference 405. VMS reference 405 can vary between different power converter 100 embodiments, but is a voltage close to zero, i.e., sufficiently low to accurately indicate that V_(SENSE) 114 has dropped to a voltage low enough that a falling edge of V_(VMS) 308 can be used to predict a valley 328A, 328B . . . 328D, as illustrated by FIG. 3. For example, VMS reference 405 is 0.115V in one embodiment.

Knee comparator 420 receives V_(SENSE) 114 at its positive input and compares it to a knee reference voltage 415 received at the negative input of knee comparator 420. Knee comparator 420 outputs the V_(KNEE) signal 425 (not shown in FIG. 3), which is HIGH whenever V_(SENSE) 114 is above the knee reference voltage 415 and is LOW whenever V_(SENSE) 114 is below the knee reference voltage 415. Hence, for example, a falling edge for V_(KNEE) 425 may occur at t_(KNEE) 326 (illustrated in FIG. 3) which corresponds to a knee for V_(SENSE) 114 (and therefore V_(CE) 304) as it decays. The specific level of the knee reference voltage 415 can vary between different power converter 100 embodiments, but is chosen to correspond to a knee voltage for V_(SENSE) and is set higher than the VMS reference voltage 405. For example, knee reference 415 is 1.48V in one embodiment.

In one embodiment, V_(VMS) 308 is included in the voltage feedback signals 218 received by the valley prediction module 214. Valley prediction module 214 performs feature analysis, by examining the timing of the rising and falling edges of V_(VMS) 308 to predict the times at which the valleys 328A, 328B . . . 328D of the voltage V_(CE) 304 across switch 112 may occur. For example, valley prediction module 214 can determine the resonant period 327 for V_(CE) 304 and V_(SENSE) 114 based on the timing data included in V_(VMS) 308. As shown in FIG. 3, the midpoint of a trough for V_(VMS) 308 approximately corresponds to a valley 328A, 328B . . . 328D and such midpoints are predictable via analysis of the edges of V_(VMS) 308. Digital logic control block 204 generates a valley indicator pulse 310 synchronized to each valley 328A, 328B . . . 328D predicted by valley prediction module 214.

Valley prediction module 214 can also predict valleys 328A, 328B . . . 328D by analyzing V_(KNEE) 425 along with V_(VMS) 308. In one embodiment, the signals V_(VMS) 308 and V_(KNEE) 425 are included in the voltage feedback signals 218 received by the valley prediction module 214. The falling edge of V_(KNEE) 425 occurring at time t_(KNEE) 326A and the first falling edge of V_(VMS) 308 within a single switching cycle represent two known time and voltage points for V_(SENSE) 114. Since V_(SENSE) 114 and V_(CE) 304 are known to be decaying sinusoidal waveforms, valley prediction module 214 can utilize Fourier analysis techniques associated with decaying sinusoidal signals to characterize and predict the behavior of V_(SENSE) 114. Due to the known and predictable relationship between V_(SENSE) 114 and V_(CE) 304, valley prediction module 214 can similarly characterize and predict the behavior of V_(CE) 304, including the timing of valleys 328A, 328B . . . 328D. Digital logic control block 204 generates a valley pulse 310 synchronized to each valley 328A, 328B . . . 328D predicted by valley prediction module 214.

The valley detection and prediction operate in real time switching-cycle by switching-cycle of the switching power converter. Because the resonant characteristics of the power converter including the transformer magnetizing inductance and the parasitic capacitance can vary substantially among individual power supplies during mass production, and/or when the power converter is operating under different conditions, the real-time detection and prediction make the improved VMS scheme insensitive to the resonant characteristics variations during the power supply mass production and operations.

As described previously, FIG. 3. is for illustrative purpose only. Although four valleys are shown in FIG. 3, there can be more or fewer than four valleys before the switch is turned ON again at t_(ON) 320B, and typically there are more valleys in light load conditions and fewer valleys in heavy load conditions. In some embodiments, the improved VMS scheme implemented by digital logic control block 204 can adapt to specific power converter operating conditions, such as a light output load. For example, a light load condition typically uses a PFM controls scheme and results in exceptionally long switching periods, causing V_(CE) 304 and V_(SENSE) 114 to decay to the point that the benefits of VMS switching are minimal. In one embodiment, digital logic control block 204 maintains a counter (not shown) to count the valleys 328A, 328B . . . 328D experienced during a switching period and, if the count exceeds a predetermined threshold, sets control signal 110 HIGH (turning on switch 112) at the desired switch time 330 rather than at the subsequent valley 328A, 328B . . . 328D. In another embodiment, digital logic control block 204 monitors durations of troughs on V_(VMS) 308, and if a trough duration exceeds a threshold, sets control signal 110 HIGH (turning on switch 112) at the desired switch time 330 rather than at the subsequent valley 328A, 328B . . . 328D, as it is likely that V_(SENSE) 114 has decayed such that it will not again exceed VMS reference 405 within the switching period.

Upon reading this disclosure, those of skill in the art will appreciate still additional alternative embodiments of an improved VMS scheme and associated implementation circuitry for switch-mode power converters through the disclosed principles herein. Thus, while particular embodiments and applications have been illustrated and described, it is to be understood that the disclosed embodiments are not limited to the precise construction and components disclosed herein. Various modifications, changes and variations, which will be apparent to those skilled in the art, may be made in the arrangement, operation and details of the method and apparatus disclosed herein without departing from the spirit and scope described herein. 

1. A switching power converter comprising: a transformer including a primary winding coupled to an input voltage and a secondary winding coupled to an output of the switching power converter; a switch coupled to the primary winding of the transformer, current through the primary winding being generated while the switch is turned on and not being generated while the switch is turned off; and a controller configured to generate a control signal to turn on or turn off the switch, the switch being turned on responsive to the control signal being in a first state and the switch being turned off responsive to the control signal being in a second state, wherein: the controller is further configured to determine a desired turn-on time of the switch in each switching cycle according to a control mode employed by the switching power converter; and the controller is further configured to generate in each switching cycle the control signal in the first state to turn on the switch at an actual turn-on time corresponding to one of a plurality of local minimums of a voltage across the switch subsequent to the desired turn-on time determined according to the control mode.
 2. The switching power converter of claim 1, wherein said one of the local minimums of the voltage across the switch is a first local minimum voltage occurring immediately subsequent to the desired turn-on time determined according to the control mode.
 3. The switching power converter of claim 1, wherein the switch is a bipolar junction transistor and the voltage across the switch corresponds to the voltage between a collector and an emitter of the bipolar junction transistor.
 4. The switching power converter of claim 1, wherein the switch is a metal oxide semiconductor field-effect transistor (MOSFET) and the voltage across the switch corresponds to the voltage between a drain and a source of the MOSFET.
 5. The switching power converter of claim 1, wherein the voltage across the switch is a decaying sinusoidal signal generated while the switch is turned off in each switching cycle.
 6. The switching power converter of claim 1, wherein the controller determines the desired turn-on time of the switch in each switching cycle according to the control mode employed by the switching power converter, independently of a transformer reset period or a resonant period of the voltage across the switch.
 7. The switching power converter of claim 1, wherein: the controller includes a comparator configured to compare a scaled-down output voltage of the switching power converter with a predetermined reference voltage to generate a valley mode switching signal transitioning between the first state and the second state; and the controller predicts said one of the local minimums based on timing of transition of the valley mode switching signal between the first state and the second state.
 8. The switching power converter of claim 7, wherein the controller is configured to generate the control signal in the first state to turn on the switch at the desired on-time if a duration of the valley mode switching signal being in the second state exceeds a predetermined threshold duration.
 9. The switching power converter of claim 1, wherein the controller is configured to count the number of local minimums of the voltage across the switch, and generate the control signal in the first state to turn on the switch at the desired on-time if the counted number of local minimums of the voltage across the switch exceeds a predetermined threshold count.
 10. The switching power converter of claim 1, wherein the switching power converter is a primary-side feedback, flyback-type switching power converter.
 11. The switching power converter of claim 1, wherein the control mode is pulse width modulation (PWM) or pulse frequency modulation (PFM) or a combination of PWM and PFM.
 12. In a controller, a method of controlling a switching power converter, the switching power converter including a transformer with a primary winding coupled to an input voltage and a secondary winding coupled to an output of the switching power converter, and a switch coupled to the primary winding of the transformer, current through the primary winding being generated while the switch is turned on and not being generated while the switch is turned off, the method comprising: determining a desired turn-on time of the switch in each switching cycle according to a control mode employed by the switching power converter; generating in each switching cycle a control signal in a first state to turn on the switch at an actual turn-on time corresponding to one of a plurality of local minimums of a voltage across the switch subsequent to the desired turn-on time determined according to the control mode; and generating in each switching cycle the control signal in the second state to turn off the switch according to the control mode.
 13. The method of claim 12, wherein said one of the local minimums of the voltage across the switch is a first local minimum voltage occurring immediately subsequent to the desired turn-on time determined according to the control mode.
 14. The method of claim 12, wherein the switch is a bipolar junction transistor and the voltage across the switch corresponds to the voltage between a collector and an emitter of the bipolar junction transistor.
 15. The method of claim 12, wherein the switch is a metal oxide semiconductor field-effect transistor (MOSFET) and the voltage across the switch corresponds to the voltage between a drain and a source of the MOSFET.
 16. The method of claim 12, wherein the voltage across the switch is a decaying sinusoidal signal generated while the switch is turned off in each switching cycle.
 17. The method of claim 12, the desired turn-on time of the switch is determined in each switching cycle according to the control mode employed by the switching power converter, independently of a transformer reset period or a resonant period of the voltage across the switch.
 18. The method of claim 12, further comprising: comparing a scaled-down output voltage of the switching power converter with a predetermined reference voltage to generate a valley mode switching signal transitioning between the first state and the second state; and predicting said one of the local minimums based on timing of transition of the valley mode switching signal between the first state and the second state.
 19. The method of claim 18, further comprising generating the control signal in the first state to turn on the switch at the desired on-time if a duration of the valley mode switching signal being in the second state exceeds a predetermined threshold duration.
 20. The method of claim 12, further comprising: counting the number of local minimums of the voltage across the switch; and generating the control signal in the first state to turn on the switch at the desired on-time if the count exceeds a predetermined threshold count.
 21. The method of claim 12, wherein the switching power converter is a primary-side feedback, flyback-type switching power converter.
 22. The method of claim 12, wherein the control mode is pulse width modulation (PWM) or pulse frequency modulation (PFM) or a combination of PWM and PFM. 